Atomically thin indium oxide transistors

被引:0
|
作者
Seong Keun Kim
机构
[1] Korea Institute of Science and Technology,Electronic Materials Research Center
[2] Korea University,KU
来源
Nature Electronics | 2022年 / 5卷
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摘要
Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.
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页码:129 / 130
页数:1
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