Atomically thin indium oxide transistors

被引：0

作者：

Seong Keun Kim

机构：

[1] Korea Institute of Science and Technology,Electronic Materials Research Center

[2] Korea University,KU

来源：

Nature Electronics | 2022年 / 5卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

引用

页码：129 / 130

页数：1

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