Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips

被引:10
|
作者
Liu, Yuyi [1 ]
Gao, Bin [1 ]
Tang, Jianshi [1 ]
Wu, Huaqiang [1 ]
Qian, He [1 ]
机构
[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
resistive random-access memory; computation-in-memory; compact model; device-architecture-algorithm co-design; compiler; ANALOG RRAM; DEVICE; MODEL;
D O I
10.1007/s11432-023-3785-8
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Computation-in-memory (CIM) chips offer an energy-efficient approach to artificial intelligence computing workloads. Resistive random-access memory (RRAM)-based CIM chips have proven to be a promising solution for overcoming the von Neumann bottleneck. In this paper, we review our recent studies on the architecture-circuit-technology co-optimization of scalable CIM chips and related hardware demonstrations. To further minimize data movements between memory and computing units, architecture optimization methods have been introduced. Then, we propose a device-architecture-algorithm co-design simulator to provide guidelines for designing CIM systems. A physics-based compact RRAM model and an array-level analog computing model were embedded in the simulator. In addition, a CIM compiler was proposed to optimize the on-chip dataflow. Finally, research perspectives are proposed for future development.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] Circuit-Technology Co-Optimization of Heterogeneous Hierarchical Network-on-Chips
    Kani, Nickvash
    Naeemi, Azad
    2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2012,
  • [22] A ZnTaOx Based Resistive Switching Random Access Memory
    Zheng, K.
    Zhao, J. L.
    Leck, K. S.
    Teo, K. L.
    Yeo, E. G.
    Sun, X. W.
    ECS SOLID STATE LETTERS, 2014, 3 (07) : Q36 - Q39
  • [23] Amorphous ZnO based resistive random access memory
    Huang, Yong
    Shen, Zihan
    Wu, Ye
    Wang, Xiaoqiu
    Zhang, Shufang
    Shi, Xiaoqin
    Zeng, Haibo
    RSC ADVANCES, 2016, 6 (22): : 17867 - 17872
  • [24] A Novel Resistive Memory-based Process-in-memory Architecture for Efficient Logic and Add Operations
    Li, Taozhong
    Wang, Qin
    Zhu, Yongxin
    Jiang, Jianfei
    He, Guanghui
    Jin, Jing
    Mao, Zhigang
    Jing, Naifeng
    ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS, 2019, 24 (02)
  • [25] Aliens: A Novel Hybrid Architecture for Resistive Random-Access Memory
    Wu, Bing
    Feng, Dan
    Tong, Wei
    Liu, Jingning
    Li, Shuai
    Yang, Mingshun
    Wang, Chengning
    Zhang, Yang
    2018 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD) DIGEST OF TECHNICAL PAPERS, 2018,
  • [26] A compute-in-memory chip based on resistive random-access memory
    Weier Wan
    Rajkumar Kubendran
    Clemens Schaefer
    Sukru Burc Eryilmaz
    Wenqiang Zhang
    Dabin Wu
    Stephen Deiss
    Priyanka Raina
    He Qian
    Bin Gao
    Siddharth Joshi
    Huaqiang Wu
    H.-S. Philip Wong
    Gert Cauwenberghs
    Nature, 2022, 608 : 504 - 512
  • [27] A compute-in-memory chip based on resistive random-access memory
    Wan, Weier
    Kubendran, Rajkumar
    Schaefer, Clemens
    Eryilmaz, Sukru Burc
    Zhang, Wenqiang
    Wu, Dabin
    Deiss, Stephen
    Raina, Priyanka
    Qian, He
    Gao, Bin
    Joshi, Siddharth
    Wu, Huaqiang
    Wong, H-S Philip
    Cauwenberghs, Gert
    NATURE, 2022, 608 (7923) : 504 - +
  • [28] Co-Optimization of Memory Access and Task Scheduling on MPSoC Architectures with Multi-Level Memory
    He, Yi
    Xue, Chun Jason
    Xu, Cathy Qun
    Sha, Edwin H. -M.
    2010 15TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2010), 2010, : 93 - +
  • [29] Resistive random-access memory based on ratioed memristors
    Lastras-Montano, Miguel Angel
    Cheng, Kwang-Ting
    NATURE ELECTRONICS, 2018, 1 (08): : 466 - 472
  • [30] Resistive Random Access Memory (ReRAM) Based on Metal Oxides
    Akinaga, Hiroyuki
    Shima, Hisashi
    PROCEEDINGS OF THE IEEE, 2010, 98 (12) : 2237 - 2251