Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips

被引:10
|
作者
Liu, Yuyi [1 ]
Gao, Bin [1 ]
Tang, Jianshi [1 ]
Wu, Huaqiang [1 ]
Qian, He [1 ]
机构
[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRist, Sch Integrated Circuits, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
resistive random-access memory; computation-in-memory; compact model; device-architecture-algorithm co-design; compiler; ANALOG RRAM; DEVICE; MODEL;
D O I
10.1007/s11432-023-3785-8
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Computation-in-memory (CIM) chips offer an energy-efficient approach to artificial intelligence computing workloads. Resistive random-access memory (RRAM)-based CIM chips have proven to be a promising solution for overcoming the von Neumann bottleneck. In this paper, we review our recent studies on the architecture-circuit-technology co-optimization of scalable CIM chips and related hardware demonstrations. To further minimize data movements between memory and computing units, architecture optimization methods have been introduced. Then, we propose a device-architecture-algorithm co-design simulator to provide guidelines for designing CIM systems. A physics-based compact RRAM model and an array-level analog computing model were embedded in the simulator. In addition, a CIM compiler was proposed to optimize the on-chip dataflow. Finally, research perspectives are proposed for future development.
引用
收藏
页数:10
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