Probe and Spectral Diagnostics of the Plasma of the BCl3–Cl2 Gas Medium

被引:0
|
作者
Murin D.B. [1 ]
Chesnokov I.A. [1 ]
Gogulev I.A. [1 ]
Grishkov A.E. [1 ]
机构
[1] Ivanovo State University of Chemical Technology, Ivanovo
关键词
boron trichloride; chlorine; gas medium; gas temperature; particle concentration; radiation intensity; reduced electric field strength; specific power;
D O I
10.1134/S1063739723700701
中图分类号
学科分类号
摘要
Abstract: The probe and spectral measurements of the plasma of the BCl3–Cl2 gas medium are carried out. Data are obtained on the influence of the initial composition of the gas medium on the electric field strength, gas temperature, particle concentration, and reduced electric field strength under conditions of a direct current glow discharge. The emission spectra of the plasma of the BCl3–Cl2 gas medium are analyzed, the main emitting components are identified, and the relationships between radiation intensities and particle concentrations are established. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, No. 6, pp. 469–474. Pleiades Publishing, Ltd., 2023. Russian Text The Author(s), 2023, published in Mikroelektronika, 2023, Vol. 52, No. 6, pp. 443–448.
引用
收藏
页码:469 / 474
页数:5
相关论文
共 50 条
  • [21] Inductively coupled plasma etching of InGaP, AlInP, and AlGaP in Cl2 and BCl3 chemistries
    Univ of Florida, Gainesville, United States
    J Electron Mater, 3 (132-137):
  • [22] Reactive Ion Etching of Copper in an RF N2 + BCl3 + Cl2 Plasma
    Mal'shakov V.G.
    Berdnikov A.E.
    Popov A.A.
    Gusev V.N.
    Russian Microelectronics, 2000, 29 (4) : 235 - 240
  • [23] Etching Properties of HfO2 Thin Films in Cl2/BCl3/Ar Plasma
    Kim, Dong-Pyo
    Kim, Gwan-Ha
    Woo, Jong-Chang
    Yang, Xue
    Um, Doo-Seung
    Kim, Chang-Il
    FERROELECTRICS, 2009, 381 : 30 - 40
  • [24] Effects of O2 addition on BCl3/Cl2 plasma chemistry for Al etching
    Mitsubishi Electric Corp, Hyogo, Japan
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (7 B): : 4824 - 4828
  • [25] Reactive ion etching of GaN using Cl2/BCl3
    Lee, IH
    Choi, YS
    Youn, KK
    Yu, SJ
    Rhee, JK
    Kim, SG
    COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 769 - 774
  • [26] REACTIVE ION ETCHING OF ALUMINUM SILICON IN BBR3/CL2 AND BCL3/CL2 MIXTURES
    BELL, HB
    ANDERSON, HM
    LIGHT, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1184 - 1191
  • [27] Plasma etching of (Ba,Sr)TiO3 thin films using inductively coupled Cl2/Ar and BCl3/Cl2/Ar plasma
    Kim, GH
    Kim, KT
    Kim, DP
    Kim, CI
    THIN SOLID FILMS, 2005, 475 (1-2) : 86 - 90
  • [28] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
    Lee, Y.H.
    Kim, H.S.
    Yeom, G.Y.
    Lee, J.W.
    Yoo, M.C.
    Kim, T.I.
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):
  • [29] Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
    Lee, YH
    Kim, HS
    Yeom, GY
    Lee, JW
    Yoo, MC
    Kim, TI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1478 - 1482
  • [30] BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration
    Kang, Bohyeon
    Ahn, Sung-min
    Park, Jongseo
    An, Jehyun
    Hong, Giryun
    Ham, Beomjoo
    Baek, Rock-Hyun
    SOLID-STATE ELECTRONICS, 2024, 216