共 50 条
- [1] Effects of O-2 addition on BCl3/Cl-2 plasma chemistry for Al etching JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B): : 4824 - 4828
- [2] Role of O2 in aluminum etching with BCl3/Cl2/O2 plasma in high density plasma reactor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (10): : 5829 - 5834
- [3] The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 201 - 204
- [4] Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (02):
- [6] GaN etching in BCl3/Cl2 plasmas WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 487 - 493
- [7] Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2019, 37 (02):
- [8] Temperature dependence on dry etching of Al2O3 thin films in BCl3/Cl2/Ar plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (04): : 821 - 825
- [9] Semiempirical profile simulation of aluminum etching in Cl2/BCl3 plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (05): : 1536 - 1556