Probe and Spectral Diagnostics of the Plasma of the BCl3–Cl2 Gas Medium

被引:0
|
作者
Murin D.B. [1 ]
Chesnokov I.A. [1 ]
Gogulev I.A. [1 ]
Grishkov A.E. [1 ]
机构
[1] Ivanovo State University of Chemical Technology, Ivanovo
关键词
boron trichloride; chlorine; gas medium; gas temperature; particle concentration; radiation intensity; reduced electric field strength; specific power;
D O I
10.1134/S1063739723700701
中图分类号
学科分类号
摘要
Abstract: The probe and spectral measurements of the plasma of the BCl3–Cl2 gas medium are carried out. Data are obtained on the influence of the initial composition of the gas medium on the electric field strength, gas temperature, particle concentration, and reduced electric field strength under conditions of a direct current glow discharge. The emission spectra of the plasma of the BCl3–Cl2 gas medium are analyzed, the main emitting components are identified, and the relationships between radiation intensities and particle concentrations are established. © Pleiades Publishing, Ltd. 2023. ISSN 1063-7397, Russian Microelectronics, 2023, Vol. 52, No. 6, pp. 469–474. Pleiades Publishing, Ltd., 2023. Russian Text The Author(s), 2023, published in Mikroelektronika, 2023, Vol. 52, No. 6, pp. 443–448.
引用
收藏
页码:469 / 474
页数:5
相关论文
共 50 条
  • [41] CHARACTERIZATION OF AL/SI REACTIVE ION ETCHING IN BBR3/CL2 VS BCL3/CL2 MIXTURES
    BELL, HB
    LIGHT, RW
    ANDERSON, HM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C311 - C311
  • [42] A THERMOCHEMICAL MODEL FOR THE PLASMA-ETCHING OF ALUMINUM IN BCL3/CL2 AND BBR3/BR2
    MCNEVIN, SC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1212 - 1222
  • [43] Inductively coupled plasma etching of III-V antimonides in BCl3/Ar and Cl2/Ar
    Zhang, L
    Lester, LF
    Shul, RJ
    Willison, CG
    Leavitt, RP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 965 - 969
  • [44] Fabrication of an AIN ridge structure using inductively coupled Cl2/BCl3 plasma and a TMAH solution
    Okumura, Hironori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (02)
  • [45] AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model
    Mohammad Rammal
    Ahmed Rhallabi
    Delphine Néel
    Dalila Make
    Alexandre Shen
    Abdou Djouadi
    MRS Advances, 2019, 4 : 1579 - 1587
  • [46] AlN Etching under ICP Cl2/BCl3/Ar Plasma Mixture: Experimental Characterization and Plasma Kinetic Model
    Rammal, Mohammad
    Rhallabi, Ahmed
    Neel, Delphine
    Make, Dalila
    Shen, Alexandre
    Djouadi, Abdou
    MRS ADVANCES, 2019, 4 (27) : 1579 - 1587
  • [47] Characteristics of inductively coupled Cl2/BCl3 plasmas during GaN etching
    Kim, HS
    Yeom, GY
    Lee, JW
    Kim, TI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04): : 2214 - 2219
  • [48] Reactive ion etching of GaN and AlGaN/GaN assisted by Cl2/BCl3
    Gryglewicz, J.
    Oleszkiewicz, W.
    Ramiaczek-Krasowska, M.
    Szyszka, A.
    Prazmowska, J.
    Paszkiewicz, B.
    Paszkiewicz, R.
    Tlaczala, M.
    MATERIALS SCIENCE-POLAND, 2011, 29 (04): : 260 - 265
  • [49] Role of O2 in aluminum etching with BCl3/Cl2/O2 plasma in high density plasma reactor
    Baek, KH
    Park, C
    Lee, WG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (10): : 5829 - 5834
  • [50] INSITU PASSIVATION OF GAAS AFTER BCL3/CL2 REACTIVE ION ETCHING
    YOON, E
    GOTTSCHO, RA
    DONNELLY, VM
    HOBSON, WS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (05): : 2197 - 2200