Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

被引：0

作者：

M. K. Bakhadyrkhanov

Z. T. Kenzhaev

S. V. Koveshnikov

A. A. Usmonov

G. Kh. Mavlonov

机构：

[1] Tashkent State Technical University,

[2] Karakalpakian State University,undefined

来源：

Inorganic Materials | 2022年 / 58卷

关键词：

phosphorus; boron; diffusion; mobility; quasi-neutral complexes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1 / 6

页数：5

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