Activation of boron and phosphorus atoms implanted in polycrystalline silicon films at low temperatures

被引：1
|
作者：
Andoh, N
Sameshima, T
Andoh, Y
机构：
[1] Tokyo Univ Agr & Technol, Tokyo 1848588, Japan
[2] Nissin Ion Equipment Co Ltd, Kyoto 6018205, Japan
来源：
THIN SOLID FILMS | 2005年 / 487卷 / 1-2期
关键词：
ion doping; impurity activation; low temperature;
D O I：
10.1016/j.tsf.2005.01.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Phosphorus atoms implanted in laser crystallized polycrystalline silicon films were activated by a heat treatment in air at 260 degrees C for 1, 3 and 24 h. Analysis of ultraviolet reflectivity of phosphorus-doped silicon films implanted by ion doping method at 4 keV revealed that the thickness of the top disordered layer formed by ion bombardment was 6 nm. It is reduced to 4 nm by a 3 h heat treatment at 260 degrees C by recrystallization of disordered region. The electrical conductance of silicon films implanted increased to 1.7 x 10(5) S/sq after 3 h heat treatment. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：252 / 254
页数：3
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