Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

被引：0
|
作者：
M. K. Bakhadyrkhanov
Z. T. Kenzhaev
S. V. Koveshnikov
A. A. Usmonov
G. Kh. Mavlonov
机构：
[1] Tashkent State Technical University,
[2] Karakalpakian State University,undefined
来源：
Inorganic Materials | 2022年 / 58卷
关键词：
phosphorus; boron; diffusion; mobility; quasi-neutral complexes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1 / 6
页数：5
相关论文
共 50 条
  • [41] Doping and segregation of impurity atoms in silicon nanowires
    Fukata, N.
    Seoka, M.
    Saito, N.
    Sato, K.
    Chen, J.
    Sekiguchi, T.
    Murakami, K.
    [J]. PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 5200 - 5202
  • [42] VACANCY CAPTURE RADII OF IMPURITY ATOMS IN SILICON
    HIRATA, M
    HIRATA, M
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) : 1084 - 1086
  • [43] MAGNETIC PROPERTIES OF SILICON WITH PARAMAGNETIC IMPURITY ATOMS
    Zikrillayev, Nurulla F.
    Mavlonov, Giyosiddin Kh.
    Trabzon, Levent
    Koveshnikov, Sergey V.
    Kenzhaev, Zoir T.
    Ismailov, Timur B.
    Abduganiev, Yoldoshali A.
    [J]. EAST EUROPEAN JOURNAL OF PHYSICS, 2023, (03): : 380 - 384
  • [44] DIFFUSION OF SULFUR AND PHOSPHORUS IMPURITY ATOMS TO SURFACE OF TUNGSTEN
    CHAIKOVSKII, EF
    SOTNIKOV, VT
    [J]. FIZIKA TVERDOGO TELA, 1973, 15 (09): : 2797 - 2799
  • [45] Long-Range Interaction Between NO2 Molecules, Impurity Boron Atoms and Si Atoms with Dangling Bonds in Porous Silicon
    Ptashchenko, Fedor
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (06):
  • [46] A model of clustering of phosphorus atoms in silicon
    Velichko, OI
    Dobrushkin, VA
    Pakula, L
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 123 (02): : 176 - 180
  • [47] Observation of phosphorus atoms on silicon surfaces
    Schofield, SR
    O'Brien, JL
    Simmons, MY
    Curson, NJ
    Clark, RG
    Andrienko, I
    Prawer, S
    [J]. EXPERIMENTAL IMPLEMENTATION OF QUANTUM COMPUTATION, 2001, : 277 - 281
  • [48] Codiffusion of Gallium and Phosphorus Atoms in Silicon
    Zikrillaev, N. F.
    Isamov, S. B.
    Koveshnikov, S. V.
    Kenzhaev, Z. T.
    Turekeev, Kh. S.
    [J]. SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY, 2023, 59 (02) : 210 - 215
  • [49] Codiffusion of Gallium and Phosphorus Atoms in Silicon
    N. F. Zikrillaev
    S. B. Isamov
    S. V. Koveshnikov
    Z. T. Kenzhaev
    Kh. S. Turekeev
    [J]. Surface Engineering and Applied Electrochemistry, 2023, 59 : 210 - 215
  • [50] ANISOTROPIC POLYELEMENTOXANES OF PHOSPHORUS, BORON, AND SILICON
    SIROTKIN, OS
    KUZNETSOV, EV
    [J]. DOKLADY AKADEMII NAUK SSSR, 1984, 278 (05): : 1143 - 1146
12345