Electrical resistance and 1/f fluctuations in thin titanium films

被引：0
|
作者：
O. V. Gerashchenko
V. A. Matveev
N. K. Pleshanov
V. Yu. Bairamukov
机构：
[1] National Research Centre “Kurchatov Institute,Konstantinov Petersburg Nuclear Physics Institute
[2] ”,undefined
来源：
Physics of the Solid State | 2014年 / 56卷
关键词：
Spectral Power Density; Initial Thickness; Metallic Layer; Titanium Film; Voltage Fluctuation;
D O I：
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中图分类号：
学科分类号：
摘要：
The thickness of a metallic layer has been determined and the resistivity and spectral density of voltage fluctuations in thin titanium films with initial thicknesses of 5–100 nm, which were obtained by magnetron sputtering and intended for promising elements of the neutron optics, have been investigated. It has been found that a continuous metallic layer necessary for functioning is retained even in thinnest samples, and excess fluctuations of the layer resistance with the 1/f-type spectrum are observed. It has been shown that the method of measuring film resistivity can be used as effective express-method of determining the thickness of metallic nanolayers.
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页码：1438 / 1442
页数：4
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