Effect of high temperature annealing on the electrical performance of titanium/platinum thin films

被引：37
|
作者：
Schmid, U. [1 ]
Seidel, H. [1 ]
机构：
[1] Univ Saarland, Dept Micromech Microfluid Microactuators, D-66123 Saarbrucken, Germany
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 06期
关键词：
titanium; platinum; physical vapour deposition (PVD); electrical properties and measurements;
D O I：
10.1016/j.tsf.2007.04.128
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
in this study, the influence of post deposition annealing steps (PDA) on the electrical resistivity of evaporated titanium/platinum thin films on thermally oxidised silicon is investigated. Varying parameters are the impact of thermal loading with maximum temperatures up to TPDA=700 degrees C and the platinum top layer thickness ranging from 24 nm to 105 run. The titanium based adhesive film thickness is fixed to 10 run. Up to post deposition annealing temperatures of T-PDA=450 degrees C, the film resistivity is linearly correlated with the reciprocal value of the platinum film thickness according to the size effect. Modifications in the intrinsic film stress strongly influence the electrical material parameter in this temperature regime. At T-PDA>600 degrees C, diffusion of titanium into the platinum top layer and its plastic deformation dominate the electrical behaviour, both causing an increase in film resistivity above average. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：898 / 906
页数：9
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