Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy

被引：0
|
作者：
G. E. Cirlin
N. V. Sibirev
C. Sartel
J. -C. Harmand
机构：
[1] Russian Academy of Sciences,St. Petersburg Physicotechnological Science and Education Center
[2] Russian Academy of Sciences,Institute of Analytical Instrument Making
[3] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[4] LRN CNRS,undefined
来源：
Semiconductors | 2008年 / 42卷
关键词：
68.70; 61.46.-w; 61.46.Hk;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Possibilities of obtaining laterally ordered arrays of GaAs nanowhiskers on GaAs (110) and GaAs(111)As surfaces during the molecular beam epitaxy are considered. As in the case of the GaAs(111)As substrate, nanowhiskers are formed in the hexagonal phase on the GaAs(110) surface, which is also confirmed by the patterns of the reflection high-energy electron diffraction (obtained during the growth of nanowhiskers) and by the photoluminescence spectra.
引用
收藏
页码：710 / 713
页数：3
相关论文
共 50 条
  • [1] Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy
    Cirlin, G. E.
    Sibirev, N. V.
    Sartel, C.
    Harmand, J. -C.
    SEMICONDUCTORS, 2008, 42 (06) : 710 - 713
  • [2] GROWTH OF GAAS AND ALGAAS ON MISORIENTED (110) GAAS BY MOLECULAR-BEAM EPITAXY
    LARKINS, EC
    PAO, YC
    LIU, D
    LIN, MJ
    YOFFE, G
    HARRIS, JS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 636 - 637
  • [3] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    ALLEN, LTP
    WEBER, ER
    WASHBURN, J
    PAO, YC
    ELLIOT, AG
    JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 193 - 200
  • [4] GROWTH OF GAAS, ALGAAS, AND INGAAS ON (111)B GAAS BY MOLECULAR-BEAM EPITAXY
    ELCESS, K
    LIEVIN, JL
    FONSTAD, CG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02): : 638 - 641
  • [5] Properties of (111)A and (111)B GaAs molecular-beam epitaxy
    Galiev, GB
    Mokerov, VG
    Volkov, VY
    Imamov, RM
    Slepnev, YV
    Khabarov, YV
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 1999, 44 (11) : 1256 - 1261
  • [6] LATERAL METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS ON PATTERNED (111)B SUBSTRATES
    NOMURA, Y
    MORISHITA, Y
    GOTO, S
    KATAYAMA, Y
    ISU, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3771 - 3773
  • [7] GAAS/GE/GAAS HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
    STRITE, S
    UNLU, MS
    ADOMI, K
    GAO, GB
    AGARWAL, A
    ROCKETT, A
    MORKOC, H
    LI, D
    NAKAMURA, Y
    OTSUKA, N
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (05): : 1131 - 1140
  • [8] ANISOTROPIC LATERAL GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXY
    KAWABE, M
    SUGAYA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07): : L1077 - L1079
  • [9] The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
    G. E. Cirlin
    V. G. Dubrovskii
    N. V. Sibirev
    I. P. Soshnikov
    Yu. B. Samsonenko
    A. A. Tonkikh
    V. M. Ustinov
    Semiconductors, 2005, 39 : 557 - 564
  • [10] The diffusion mechanism in the formation of GaAs and AlGaAs nanowhiskers during the process of molecular-beam epitaxy
    Cirlin, GE
    Dubrovskii, VG
    Sibirev, NV
    Soshnikov, IP
    Samsonenko, YB
    Tonkikh, AA
    Ustinov, VM
    SEMICONDUCTORS, 2005, 39 (05) : 557 - 564
12345