LATERAL METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS ON PATTERNED (111)B SUBSTRATES

被引：14
|
作者：
NOMURA, Y [1 ]
MORISHITA, Y [1 ]
GOTO, S [1 ]
KATAYAMA, Y [1 ]
ISU, T [1 ]
机构：
[1] MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
METALORGANIC MOLECULAR BEAM EPITAXY; LATERAL EPITAXY; PATTERNED (111)B SUBSTRATES; SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; FACET;
D O I：
10.1143/JJAP.30.3771
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs layers were grown on patterned (111)BBAR substrates having (122)ABAR sidewalls with various arsenic fluxes at a fixed temperature of 480-degrees-C by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMGa) and metal arsenic. Vertical growth rate on the top and bottom (111)BBAR surfaces decreased rapidly as the arsenic flux was increased. For arsenic fluxes of 2.0 X 10(-3) Pa and more, only lateral epitaxy on the (122)ABAR sidewall was achieved. Real-time scanning microprobe reflection high-energy electron diffraction (mu-RHEED) observations showed that the surface smoothness of the epitaxial layer was maintained throughout the growth time under the optimized condition.
引用
收藏
页码：3771 / 3773
页数：3
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