Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy

被引：0
|
作者：
G. E. Cirlin
N. V. Sibirev
C. Sartel
J. -C. Harmand
机构：
[1] Russian Academy of Sciences,St. Petersburg Physicotechnological Science and Education Center
[2] Russian Academy of Sciences,Institute of Analytical Instrument Making
[3] Russian Academy of Sciences,Ioffe Physicotechnical Institute
[4] LRN CNRS,undefined
来源：
Semiconductors | 2008年 / 42卷
关键词：
68.70; 61.46.-w; 61.46.Hk;
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中图分类号：
学科分类号：
摘要：
Possibilities of obtaining laterally ordered arrays of GaAs nanowhiskers on GaAs (110) and GaAs(111)As surfaces during the molecular beam epitaxy are considered. As in the case of the GaAs(111)As substrate, nanowhiskers are formed in the hexagonal phase on the GaAs(110) surface, which is also confirmed by the patterns of the reflection high-energy electron diffraction (obtained during the growth of nanowhiskers) and by the photoluminescence spectra.
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页码：710 / 713
页数：3
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