Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC

被引：0
|
作者：
V. I. Egorkin
V. E. Zemlyakov
A. V. Nezhentsev
V. A. Gudkov
V. I. Garmash
机构：
[1] National Research University of Electronic Technology,
[2] JSC RPC Istok named after Shokin,undefined
来源：
Semiconductors | 2019年 / 53卷
关键词：
silicon carbide; ohmic contact; ion implantation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2012 / 2015
页数：3
相关论文
共 50 条
  • [41] Dislocations in 6H-SiC and their influence on electrical properties of n-type crystals
    Universite de Poitiers, Futuroscope, France
    EPJ Appl Phys, 2 (111-115):
  • [42] Dislocations in 6H-SiC and their influence on electrical properties of n-type crystals
    Tillay, V
    Pailloux, F
    Denanot, MF
    Pirouz, P
    Rabier, J
    Demenet, JL
    Barbot, JF
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1998, 2 (02): : 111 - 115
  • [43] Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC
    Zhou Tian-Yu
    Liu Xue-Chao
    Huang Wei
    Zhuo Shi-Yi
    Zheng Yan-Qing
    Shi Er-Wei
    CHINESE PHYSICS B, 2015, 24 (12)
  • [44] Ohmic contacts to n-type SiC: Influence of Au and Ta intermediate layers
    Chanchal
    Faisal, Mohammad
    Laishram, Robert
    Sharmila
    Kapoor, Sonalee
    Lohani, Jaya
    Rawal, D. S.
    Saxena, Manoj
    MICROELECTRONICS JOURNAL, 2024, 151
  • [45] Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC
    Rascuna, S.
    Badala, P.
    Tringali, C.
    Bongiorno, C.
    Smecca, E.
    Alberti, A.
    Di Franco, S.
    Giannazzo, F.
    Greco, G.
    Roccaforte, F.
    Saggio, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 97 : 62 - 66
  • [46] Refractory metal boride ohmic contacts to p-type 6H-SiC
    Auburn Univ, Auburn, United States
    J Electron Mater, 1 (12-16):
  • [47] Refractory metal boride ohmic contacts to P-type 6H-SiC
    Oder, TN
    Williams, JR
    Mohney, SE
    Crofton, J
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (01) : 12 - 16
  • [48] Refractory metal boride ohmic contacts to P-Type 6H-SiC
    Oder T.N.
    Williams J.R.
    Mohney S.E.
    Crofton J.
    Journal of Electronic Materials, 1998, 27 (1) : 12 - 16
  • [49] Low ohmic cobalt silicide contacts to p-type 6H-SiC
    Ostling, M
    Lundberg, N
    1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST, 1996, : 157 - 157
  • [50] Flash lamp annealing of implantation doped p- and n-type 6H-SiC
    Panknin, D
    Gebel, T
    Skorupa, W
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 587 - 590
12345