Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC

被引：0
|
作者：
V. I. Egorkin
V. E. Zemlyakov
A. V. Nezhentsev
V. A. Gudkov
V. I. Garmash
机构：
[1] National Research University of Electronic Technology,
[2] JSC RPC Istok named after Shokin,undefined
来源：
Semiconductors | 2019年 / 53卷
关键词：
silicon carbide; ohmic contact; ion implantation;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：2012 / 2015
页数：3
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