c-axis-textured LiNbO3 thin films on Si (111) substrates

被引：0

作者：

S.D. Cheng

X.Q. Han

C.H. Kam

Y. Zhou

Y.L. Lam

J.T. Oh

X.W. Xu

T.C. Chong

机构：

[1] Data Storage Institute,

[2] DSI Building,undefined

[3] 5,undefined

[4] Engineering Drive 1,undefined

[5] National University of Singapore,undefined

[6] 117608,undefined

[7] Singapore,undefined

[8] Photonics Research Group,undefined

[9] Schoolof Electrical and Electronic Engineering,undefined

[10] Nanyang Technological University,undefined

[11] Nanyang Avenue,undefined

[12] 639798,undefined

[13] Singapore,undefined

[14] Advanced Characterization Laboratory,undefined

[15] School of Applied Science,undefined

[16] Nanyang Technological University,undefined

[17] Nanyang Avenue,undefined

[18] 639798,undefined

[19] Singapore,undefined

来源：

Applied Physics A | 2001年 / 73卷

关键词：

PACS: 68.55.Jk; 77.84.S; 81.20.Fw;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have successfully prepared highly c-axis-textured LiNbO3 films on hydrogen-terminated Si (111) substrate using sol-gel spin-coating and rapid thermal annealing. These highly c-axis-textured films were obtained with a preheating at 300 °C for 15 min followed by a rapid thermal annealing at 500–700 °C for 120 s. The c-axis orientation of the LiNbO3 film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si (111) substrate. The c-axis orientation of LiNbO3 films is very useful in integrated optics devices and metal–ferroelectric–semiconductor nonvolatile memory applications.

引用

页码：511 / 514

页数：3

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