c-axis-textured LiNbO3 thin films on Si (111) substrates

被引:0
|
作者
S.D. Cheng
X.Q. Han
C.H. Kam
Y. Zhou
Y.L. Lam
J.T. Oh
X.W. Xu
T.C. Chong
机构
[1] Data Storage Institute,
[2] DSI Building,undefined
[3] 5,undefined
[4] Engineering Drive 1,undefined
[5] National University of Singapore,undefined
[6] 117608,undefined
[7] Singapore,undefined
[8] Photonics Research Group,undefined
[9] Schoolof Electrical and Electronic Engineering,undefined
[10] Nanyang Technological University,undefined
[11] Nanyang Avenue,undefined
[12] 639798,undefined
[13] Singapore,undefined
[14] Advanced Characterization Laboratory,undefined
[15] School of Applied Science,undefined
[16] Nanyang Technological University,undefined
[17] Nanyang Avenue,undefined
[18] 639798,undefined
[19] Singapore,undefined
来源
Applied Physics A | 2001年 / 73卷
关键词
PACS: 68.55.Jk; 77.84.S; 81.20.Fw;
D O I
暂无
中图分类号
学科分类号
摘要
We have successfully prepared highly c-axis-textured LiNbO3 films on hydrogen-terminated Si (111) substrate using sol-gel spin-coating and rapid thermal annealing. These highly c-axis-textured films were obtained with a preheating at 300 °C for 15 min followed by a rapid thermal annealing at 500–700 °C for 120 s. The c-axis orientation of the LiNbO3 film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si (111) substrate. The c-axis orientation of LiNbO3 films is very useful in integrated optics devices and metal–ferroelectric–semiconductor nonvolatile memory applications.
引用
收藏
页码:511 / 514
页数:3
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