LiNbO3 thin films were grown on (100) MgO substrates by pulsed KrF* (lambda=248 nn, tau(FWHM)similar to20 ns, v=1 Hz) laser ablation of Li-rich ceramic targets in low pressure oxygen atmosphere. The substrates were heated during the thin film deposition process at 550 degreesC. The as-grown thin films were submitted to a heat treatment in oxygen atmosphere. Moreover, after analyses the films were annealed for the second time, for 2 hours in air at atmospheric pressure. We studied the effect of ambient gas pressure and heat treatments on the stoichiometry, structure and optical properties of the deposited films. The composition and crystalline state of the deposited films were investigated by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and nuclear reaction analyses (NRA).
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Lu, HM
Ye, ZZ
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Ye, ZZ
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Huang, JY
Wang, L
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China