Epitaxial growth of LiNbO3 thin films using pulsed laser deposition

被引：41
|
作者：
Kakehi, Y
Okamato, A
Sakurai, Y
Nishikawa, Y
Yotsuya, T
Ogawa, S
机构：
[1] Technol Res Inst Osaka Prefecture, Izumi, Osaka 5941157, Japan
[2] Osaka Sci & Technol Ctr, Izumi, Osaka 5941157, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 169卷
关键词：
LiNbO3 thin film; pulsed laser deposition; epitaxial growth; oxygen radical; laser fluence; re-evaporation of Li atoms;
D O I：
10.1016/S0169-4332(00)00739-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An epitaxial lithium niobate (LiNbO3) thin film was successfully fabricated on an alpha -Al2O3(0 0 0 1) substrate using a pulsed laser deposition method and me effect of laser fluence on film quality was investigated. The Li concentration in a deposited Sim was largely influenced by oxygen radicals, which were produced not only by the interaction between the incident excimer laser and the oxygen but also by an rf-radical source: The re-evaporation of Li atoms in the film was suppressed by the oxidation of Li atoms. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：560 / 563
页数：4
相关论文
共 50 条
  • [1] Epitaxial growth of LiNbO3 thin films on (001) sapphire by pulsed laser deposition
    Aubert, P
    Garry, G
    Bisaro, R
    Olivier, J
    Garcia-Lopez, J
    Urlacher, C
    [J]. MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 107 - 110
  • [2] Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser deposition
    Sauze, Laura C.
    Vaxelaire, Nicolas
    Templier, Roselyne
    Rouchon, Denis
    Pierre, Francois
    Guedj, Cyril
    Remiens, Denis
    Rodriguez, Guillaume
    Bousquet, Marie
    Dupont, Florian
    [J]. JOURNAL OF CRYSTAL GROWTH, 2023, 601
  • [3] Epitaxial LiNbO3 thin films grown by pulsed laser deposition for optical waveguides
    Balestrino, G
    Martellucci, S
    Medaglia, PG
    Paoletti, A
    Petrocelli, G
    Tebano, A
    Tucciarone, A
    Gelli, F
    Giorgetti, E
    Sottini, S
    Tapfer, L
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1204 - 1206
  • [4] Effects of substrate temperature on the growth of oriented LiNbO3 thin films by pulsed laser deposition
    Wu, ZC
    Hu, WS
    Liu, JM
    Wang, M
    Liu, ZG
    [J]. MATERIALS LETTERS, 1998, 34 (3-6) : 332 - 335
  • [5] Pulsed laser deposition of epitaxial buffer layers on LiNbO3
    Sánchez, F
    Domingo, N
    García-Cuenca, MV
    Guerrero, C
    Ferrater, C
    Varela, M
    [J]. APPLIED SURFACE SCIENCE, 2002, 186 (1-4) : 397 - 402
  • [6] LOW-TEMPERATURE GROWTH OF EPITAXIAL LINBO3 FILMS ON SAPPHIRE(0001) SUBSTRATES USING PULSED-LASER DEPOSITION
    LEE, SH
    SONG, TK
    NOH, TW
    LEE, JH
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (01) : 43 - 45
  • [7] Growth of stoichiometric and textured LiNbO3 films on Si by pulsed laser deposition
    Chaos, JA
    Gonzalo, J
    Afonso, CN
    Perriére, J
    García-González, MT
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (06): : 705 - 710
  • [8] Growth of stoichiometric and textured LiNbO3 films on Si by pulsed laser deposition
    J.A. Chaos
    J. Gonzalo
    C.N. Afonso
    J. Perrière
    M.T. García-González
    [J]. Applied Physics A, 2001, 72 : 705 - 710
  • [9] Growth of LiNbO3 films on single crystal sapphire substrates using pulsed laser deposition
    Gim, Y
    Gahagan, KT
    Kwon, C
    Hawley, M
    Gopalan, V
    Robinson, JM
    Mitchell, TE
    Jia, QX
    [J]. INTEGRATED FERROELECTRICS, 1999, 25 (1-4) : 431 - 442
  • [10] Kinetic theory simulation of LiNbO3 thin films deposition distribution by pulsed laser deposition
    Liu, Yue
    Li, Jiuyang
    Zhang, Zichang
    Kong, Yongfa
    [J]. FERROELECTRICS, 2017, 520 (01) : 34 - 41
12345