Effects of substrate temperature on the growth of oriented LiNbO3 thin films by pulsed laser deposition

被引:10
|
作者
Wu, ZC [1 ]
Hu, WS
Liu, JM
Wang, M
Liu, ZG
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
LiNbO3; lithium niobate; films; laser deposition; substrate temperature;
D O I
10.1016/S0167-577X(97)00206-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Oriented LiNbO3 thin films have been prepared by pulsed laser deposition on fused silica. substrates under a proper low electric field. The as-grown films were characterized by means of X-ray diffraction theta-2 theta scans, X-ray photo-electron spectrometry and atomic force microscopy. Significant effects of the substrate temperature and magnitude of the applied electric field on the orientation of the films are revealed, demonstrating the preferred electric field of similar to 7 V/cm and substrate temperature of 600 degrees C. Drastic influence of the substrate temperature on the stoichiometry of the thin films is also shown. The as-prepared thin films show quite good surface quality. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:332 / 335
页数:4
相关论文
共 50 条
  • [1] Effects of substrate temperature on the growth of oriented LiNbO3 thin films by pulsed laser deposition
    Nanjing Univ, Nanjing, China
    [J]. Mater Lett, 3-6 (332-335):
  • [2] Epitaxial growth of LiNbO3 thin films using pulsed laser deposition
    Kakehi, Y
    Okamato, A
    Sakurai, Y
    Nishikawa, Y
    Yotsuya, T
    Ogawa, S
    [J]. APPLIED SURFACE SCIENCE, 2001, 169 : 560 - 563
  • [3] Epitaxial growth of LiNbO3 thin films on (001) sapphire by pulsed laser deposition
    Aubert, P
    Garry, G
    Bisaro, R
    Olivier, J
    Garcia-Lopez, J
    Urlacher, C
    [J]. MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 107 - 110
  • [4] Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser deposition
    Sauze, Laura C.
    Vaxelaire, Nicolas
    Templier, Roselyne
    Rouchon, Denis
    Pierre, Francois
    Guedj, Cyril
    Remiens, Denis
    Rodriguez, Guillaume
    Bousquet, Marie
    Dupont, Florian
    [J]. JOURNAL OF CRYSTAL GROWTH, 2023, 601
  • [5] Effect of substrate temperature on the properties of LiNbO3 nanocrystalline films during pulsed laser deposition
    Vakulov Z.E.
    Zamburg E.G.
    Golosov D.A.
    Zavadskiy S.M.
    Miakonkikh A.V.
    Clemente I.E.
    Rudenko K.V.
    Dostanko A.P.
    Ageev O.A.
    [J]. Bulletin of the Russian Academy of Sciences: Physics, 2017, 81 (12) : 1476 - 1480
  • [6] Growth of textured LiNbO3 thin film on Si (111) substrate by pulsed laser deposition
    Wang, XC
    Ye, ZZ
    Wu, GB
    Cao, LL
    Zhao, BH
    [J]. MATERIALS LETTERS, 2005, 59 (24-25) : 2994 - 2997
  • [7] Influence of substrate temperature on the growth and optical waveguide properties of oriented LiNbO3 thin films
    Wang, Xinchang
    Ye, Zhizhen
    Li, Guangming
    Zhao, Binghui
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 306 (01) : 62 - 67
  • [8] Growth of stoichiometric and textured LiNbO3 films on Si by pulsed laser deposition
    Chaos, JA
    Gonzalo, J
    Afonso, CN
    Perriére, J
    García-González, MT
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (06): : 705 - 710
  • [9] Growth of stoichiometric and textured LiNbO3 films on Si by pulsed laser deposition
    J.A. Chaos
    J. Gonzalo
    C.N. Afonso
    J. Perrière
    M.T. García-González
    [J]. Applied Physics A, 2001, 72 : 705 - 710
  • [10] Microstructures and properties LiNbO3 films grown by pulsed laser deposition on GaN substrate
    Liao X.
    Zhu J.
    Luo W.
    Hao L.
    [J]. Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2010, 30 (05): : 496 - 499