Crystallization of 3C-SiC (111) thin films grown on Si (111) substrates by post thermal annealing

Thermal treatment of SiC thin films grown on p-Si (111) substrates by plasma enhanced chemical vapor deposition was performed to crystallize as-grown amorphous SiC layers. Nomarski optical microscopy and X-ray diffraction measurements,showed that the as-grown SiC thin films on p-Si (111) substrates were amorphous and that the films annealed at 1100 degreesC were crystallized with 3C-SiC (111) orientation. The results of X-ray photoelectron spectroscopy measurements showed that in the crystallized films. good stoichiometry was realized for the components of the SiC epilayer. These results indicate that SiC thin films grown on p-Si (111) substrates were crystallized by thermal treatment.