Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs

被引：0

作者：

Vaibhav Purwar

Rajeev Gupta

Himanshi Awasthi

Sarvesh Dubey

机构：

[1] Rajasthan Technical University,Department of Electronics Engineering

[2] Dr. A P J Abdul Kalam Technical University,Department of Electronics and Communication Engineering

[3] L.N.D. College Motihari (B.R.A. Bihar University),Department of Physics

来源：

Silicon | 2022年 / 14卷

关键词：

Dielectric pocket (; ); Double gate-all-around (; ); Dielectric materials; Analog/RF performance; Drive current;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper investigates the performance analysis of Dielectric Pocket (DP)-Double Gate All Around (DGAA) with three different gate dielectric materials and analyzes its performance. The performance booster dielectric pocket (DP) reduces the OFF-state power dissipation with minor variation in ON-current. Various dielectric materials on gate oxide have been checked to uplift from this slight variation in ON-current, and the device’s performance has been evaluated. The immunization towards short-channel effects (SCEs) and variation in analog/RF performance has been investigated with the various gate dielectric materials. Performance has also been investigated in terms of the device’s speed with the different gate dielectric materials. It has been done using a SILVACO Atlas TCAD simulator with a three-dimensional (3D) device simulation.

引用

页码：9361 / 9366

页数：5

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