Impact of Different Gate Dielectric Materials on Analog/RF Performance of Dielectric-Pocket Double Gate-All-Around (DP − DGAA) MOSFETs

This paper investigates the performance analysis of Dielectric Pocket (DP)-Double Gate All Around (DGAA) with three different gate dielectric materials and analyzes its performance. The performance booster dielectric pocket (DP) reduces the OFF-state power dissipation with minor variation in ON-current. Various dielectric materials on gate oxide have been checked to uplift from this slight variation in ON-current, and the device’s performance has been evaluated. The immunization towards short-channel effects (SCEs) and variation in analog/RF performance has been investigated with the various gate dielectric materials. Performance has also been investigated in terms of the device’s speed with the different gate dielectric materials. It has been done using a SILVACO Atlas TCAD simulator with a three-dimensional (3D) device simulation.