Activation of a semiconductor surface by a pulsed magnetic field

被引：0
|
作者：
M. N. Levin
A. V. Tatarintsev
O. A. Kostsova
A. M. Kostsov
机构：
[1] Voronezh State University,
来源：
Technical Physics | 2003年 / 48卷
关键词：
Silicon; Magnetic Field; Adsorption Capacity; Gallium; Germanium;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The possibility of semiconductor surface activation, which shows up as a long-term increase in the adsorption capacity in response to a short exposure to a pulsed magnetic field, is demonstrated for the first time. Magnetic-field-induced surface activation is studied on silicon, germanium, and gallium arsenide crystals. The effect revealed extends the capabilities of thin-film growth on the semiconductor surface.
引用
收藏
页码：1304 / 1306
页数：2
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