Silicon;
Magnetic Field;
Adsorption Capacity;
Gallium;
Germanium;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
The possibility of semiconductor surface activation, which shows up as a long-term increase in the adsorption capacity in response to a short exposure to a pulsed magnetic field, is demonstrated for the first time. Magnetic-field-induced surface activation is studied on silicon, germanium, and gallium arsenide crystals. The effect revealed extends the capabilities of thin-film growth on the semiconductor surface.