共 50 条
- [1] APPLICABILITY OF THE METHOD OF MEASURING THE RATE OF SURFACE RECOMBINATION FROM THE CHANGE IN RESISTANCE OF A SEMICONDUCTOR IN A MAGNETIC FIELDSOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (05): : 978 - 979RZHANOV, AVARKHIPOVA, IABIDULIA, VN
- [2] A METHOD FOR MEASURING THE VOLUME LIFETIME AND THE DIFFUSION COEFFICIENT OF CURRENT CARRIERS BY MEASURING THE RESISTANCE OF A SEMICONDUCTOR IN A MAGNETIC FIELDSOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (12): : 2572 - 2574SOROKIN, OV
- [3] AUGER RECOMBINATION IN A SEMICONDUCTOR UNDER A MAGNETIC-FIELDJOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4717 - 4723TAKESHIMA, M
- [4] Auger recombination in semiconductor quantum wells in a magnetic fieldPHYSICAL REVIEW B, 2001, 63 (07):Samsonidze, GGZegrya, GG
- [5] NONEQUILIBRIUM CARRIER DENSITY DEPENDENCE OF RATE OF RECOMBINATION AT SURFACE OF A SEMICONDUCTORSOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09): : 1035 - +SINITSA, SP
- [6] APPARATUS FOR MEASURING THE RATE OF SURFACE RECOMBINATION OF SEMICONDUCTORS USING CATHODOLUMINESCENCEINSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1983, 26 (01) : 198 - 202KORINFSKII, ADMUSATOV, AL
- [7] REDUCTION OF THE CHARGE CARRIER RECOMBINATION RATE IN A MAGNETIC FIELDSOVIET PHYSICS-SOLID STATE, 1964, 6 (03): : 745 - 746KOVARSKII, VA
- [8] NEW METHOD FOR MEASURING RATIOS OF RATE CONSTANTS FOR RADICAL RECOMBINATIONJOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1972, 94 (01) : 25 - &HIATT, RBENSON, SW
- [9] Activation of a semiconductor surface by a pulsed magnetic fieldTechnical Physics, 2003, 48 : 1304 - 1306M. N. LevinA. V. TatarintsevO. A. KostsovaA. M. Kostsov
- [10] Activation of a semiconductor surface by a pulsed magnetic fieldTECHNICAL PHYSICS, 2003, 48 (10) : 1304 - 1306Levin, MNTatarintsev, AVKostsova, OAKostsov, AM