A Novel 4H-SiC Super Junction UMOSFET with Hetero-Junction Diode for Enhanced Reverse Recovery Characteristics and Low Switching Loss

被引：0
|
作者：
J. Kim
K. Kim
机构：
[1] Department of Electronic Engineering,
[2] Sogang University,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
4; -SiC; hetero-junction; super-junction; body diode; reverse recovery; switching energy loss;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：587 / 595
页数：8
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