Measurements of the semiconductor substrate thickness with a low-coherence tandem interferometer at a nonstationary temperature

被引：0
|
作者：
P. V. Volkov
A. V. Goryunov
A. Yu. Luk’yanov
A. D. Tertyshnik
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
来源：
Technical Physics Letters | 2015年 / 41卷
关键词：
Technical Physic Letter; Optical Thickness; Substrate Thickness; Phase Thickness; Nonstationary Temperature;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose an original technique for measuring minor variations in the semiconductor structure thickness at nonstationary temperature with the use of the principle of low-coherence tandem interferometry. The attained temperature and thickness resolutions are ±2°C and ±2 nm, respectively.
引用
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页码：110 / 112
页数：2
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