Peculiarities of electron transport in SiOx films obtained by ion-plasma sputtering

被引：0
|
作者：
O. L. Bratus
A. A. Evtukh
V. V. Ilchenko
机构：
[1] NAS of Ukraine,V. E. Lashkaryov Institute of Semiconductor Physics
[2] Taras Shevchenko National University of Kyiv,Institute of High Technologies
来源：
Applied Nanoscience | 2020年 / 10卷
关键词：
Silicon nanoclusters; Electron transport; Current–voltage characteristic; Variable-range hopping; Trap;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The electrical conductivity of SiOx and nanocomposite SiO2(Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanisms of the electrical conductivity of the SiOx and SiO2(Si) films have been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level (Mott’s mechanism). The minimum of current in current–voltage characteristics has been revealed in the temperature range 78–225 K. The qualitative model for explanation of the features of electron transport in SiOx and SiO2(Si) films has been proposed.
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收藏
页码：2723 / 2729
页数：6
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