New collective trampoline mechanism of accelerated ion-plasma sputtering

被引:4
|
作者
Gabovich, Alexander M. [1 ]
Semeniuk, Valerii F. [2 ]
Semeniuk, Nadiia, I [2 ]
机构
[1] Natl Acad Sci, Crystal Phys Dept, Inst Phys, Kiev, Ukraine
[2] GreSem Innovat LLC, Kiev, Ukraine
关键词
ion sputtering; discharge plasma; surface texturing; HIGHLY-CHARGED IONS; MOLECULAR-DYNAMICS SIMULATIONS; IMAGE ACCELERATION; CRATER FORMATION; METAL-SURFACE; ENERGY; COPPER; ATOMS; IMPACT; MODEL;
D O I
10.1088/1361-6463/ab05a1
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results of the newly found anomalous accelerated plasma ion sputtering of solid-state targets are presented. The rate of sputtered particles comprises from one to several tens of atoms per one impinging ion, ion energies being in the range of tens to five hundreds electron volts. The anomalous sputtering is realized for ion current density in the plasma flow being not less than 10 mA cm(-2) and threshold specific power of the ion flow from 0.7 to 2 W cm(-2) depending on the target material. The qualitative explanation proposed dubbed 'collective trampoline accelerated sputtering'. The collective nature of this sputtering regime differs from the conventional pair collision cascade one. The trampoline sputtering leads to the intense texturing of the materials with submicron characteristic structure sizes. The new sputtering method could be applied (i) in the technology of plasma ion deposition of the functional coatings to replace the widespread magnetron sputtering sources of lower productivity; (ii) in the photovoltaics to solve the problem of the so-called 'black' multi-crystalline silicon in order to reduce the light reflectance coefficient; (iii) in the production of silicon composite anodes for lithium ion batteries to enhance their lifetimes regarding charge/discharge cycles, for which the final positive result is largely determined by the surface structure of the silicon wafer for photovoltaics and the surface structure of the anode current collector for lithium-ion batteries.
引用
收藏
页数:15
相关论文
共 50 条
  • [1] SELECTIVE ETCHING OF YBCO TARGETS BY ION-PLASMA SPUTTERING
    GRISHIN, AM
    GUSAKOV, GV
    ULYANOV, AN
    APPLIED SUPERCONDUCTIVITY, 1993, 1 (3-6) : 667 - 675
  • [2] Features of AlN film grown by ion-plasma sputtering
    Lubyanskiy, Ya V.
    Bondarev, A. D.
    Soshnikov, I. P.
    Kotlyar, K. P.
    Kirilenko, D. A.
    Bert, N. A.
    Ayusheva, K. R.
    Tarasov, I. S.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [3] SELECTIVE ETCHING OF YBCO TARGET BY ION-PLASMA SPUTTERING
    GRISHIN, AM
    GUSAKOV, GV
    ULYANOV, AN
    SOLID STATE COMMUNICATIONS, 1992, 84 (07) : 749 - 751
  • [4] DETECTION OF ION-PLASMA WAVES BY COLLECTIVE THOMSON SCATTERING
    BAUER, BS
    DRAKE, RP
    ESTABROOK, KG
    WATT, RG
    WILKE, MD
    BAKER, SA
    PHYSICAL REVIEW LETTERS, 1995, 74 (18) : 3604 - 3607
  • [5] Properties of AlN films deposited by reactive ion-plasma sputtering
    Bert, N. A.
    Bondarev, A. D.
    Zolotarev, V. V.
    Kirilenko, D. A.
    Lubyanskiy, Ya. V.
    Lyutetskiy, A. V.
    Slipchenko, S. O.
    Petrunov, A. N.
    Pikhtin, N. A.
    Ayusheva, K. R.
    Arsentyev, I. N.
    Tarasov, I. S.
    SEMICONDUCTORS, 2015, 49 (10) : 1383 - 1387
  • [6] Peculiarities of electron transport in SiOxfilms obtained by ion-plasma sputtering
    Bratus, O. L.
    Evtukh, A. A.
    Ilchenko, V. V.
    APPLIED NANOSCIENCE, 2020, 10 (08) : 2723 - 2729
  • [7] Hydrophobization of Track Membrane Surface by Ion-Plasma Sputtering Method
    Kuklin, I. E.
    Khlebnikov, N. A.
    Barashev, N. R.
    Serkov, K. V.
    Polyakov, E. V.
    Zdorovets, M. V.
    Borgekov, D. B.
    Zhidkov, I. S.
    Cholakh, S. O.
    Kozlovskiy, A. L.
    IV INTERNATIONAL YOUNG RESEARCHERS' CONFERENCE: PHYSICS, TECHNOLOGIES AND INNOVATION (PTI-2017), 2017, 1886
  • [8] GROWTH OF FILMS OF FERROELECTRIC COMPOUND OXIDES AT THE ION-PLASMA SPUTTERING
    MUKHORTOV, VM
    GOLOVKO, YI
    MUKHORTOV, VM
    DUDKEVICH, VP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1981, (02): : 7 - 11
  • [9] Properties of AlN films deposited by reactive ion-plasma sputtering
    N. A. Bert
    A. D. Bondarev
    V. V. Zolotarev
    D. A. Kirilenko
    Ya. V. Lubyanskiy
    A. V. Lyutetskiy
    S. O. Slipchenko
    A. N. Petrunov
    N. A. Pikhtin
    K. R. Ayusheva
    I. N. Arsentyev
    I. S. Tarasov
    Semiconductors, 2015, 49 : 1383 - 1387
  • [10] Protective antifriction multilayer nanostructured coating by ion-plasma sputtering
    Urbahs, A.
    Urbaha, M.
    Savkovs, K.
    Andrejeva, D.
    3RD INTERNATIONAL CONFERENCE ON INNOVATIVE MATERIALS, STRUCTURES AND TECHNOLOGIES (IMST 2017), 2017, 251