InSb/InAs quantum dots grown by liquid phase epitaxy

被引：0
|
作者：
K. D. Moiseev
Ya. A. Parkhomenko
A. V. Ankudinov
E. V. Gushchina
M. P. Mikhaĭlova
A. N. Titkov
Yu. P. Yakovlev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
73.21.La; 81.15.Lm;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The first original results on the growth of quantum dots (QDs) in the InSb/InAs system by liquid phase epitaxy (LPE) are reported. The density and dimensions of QDs were studied by methods of scanning probe microscopy and atomic force microscopy. The surface density, shapes, and dimensions of LPE-grown nanoislands depend on the growth conditions (temperature, cooling rate, and solution melt-substrate contact time). In the interval of temperatures T = 420–445°C, homogeneous arrays of InSb quantum dots on InAs(100) substrates were obtained with an average height of H = 3.4 ± 1nm, a radius of R = 27.2 ± 7.5 nm, and a density of up to 1.9 × 1010 cm−2.
引用
收藏
页码：295 / 298
页数：3
相关论文
共 50 条
  • [21] Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy
    Lendyashova, V. V.
    Ilkiv, I. V.
    Borodin, B. R.
    Ubyivovk, E. V.
    Reznik, R. R.
    Talalaev, V. G.
    Cirlin, G. E.
    ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2022, 15 (03): : 75 - 79
  • [22] Photoelectric properties of bimodal arrays of InAs/GaAs quantum dots grown by means of gas phase epitaxy
    A. P. Gorshkov
    N. S. Volkova
    I. A. Karpovich
    A. V. Zdoroveishev
    I. A. Polova
    Bulletin of the Russian Academy of Sciences: Physics, 2013, 77 (1) : 53 - 55
  • [23] Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy
    Höglund, L
    Petrini, E
    Asplund, C
    Malm, H
    Andersson, JY
    Holtz, PO
    APPLIED SURFACE SCIENCE, 2006, 252 (15) : 5525 - 5529
  • [24] Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy
    Pulzara-Mora, A.
    Cruz-Hernandez, E.
    Rojas-Ramirez, J. S.
    Mendez-Garcia, V. H.
    Lopez-Lopez, M.
    MICROELECTRONICS JOURNAL, 2008, 39 (11) : 1248 - 1250
  • [25] Effect of Cap Thickness on InAs/InP Quantum Dots Grown by Droplet Epitaxy in Metal-Organic Vapor Phase Epitaxy
    Sala, Elisa M.
    Godsland, Max
    Trapalis, Aristotelis
    Heffernan, Jon
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2021, 15 (09):
  • [26] Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy
    Zribi, Jihene
    Morris, Denis
    Ares, Richard
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (05):
  • [27] In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix
    A. N. Semenov
    O. G. Lyublinskaya
    V. A. Solov’ev
    B. Ya. Mel’tser
    S. V. Ivanov
    Semiconductors, 2008, 42 : 74 - 79
  • [28] In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix
    Semenov, A. N.
    Lyublinskaya, O. G.
    Solov'ev, V. A.
    Mel'tser, B. Ya.
    Ivanov, S. V.
    SEMICONDUCTORS, 2008, 42 (01) : 74 - 79
  • [29] Investigation of Morphology of InSb/InAs Quantum Nano-Stripe Grown by Molecular Beam Epitaxy
    Rongrueangkul, Karn
    Srisinsuphya, Panithan
    Thainoi, Supachok
    Kiravittaya, Suwit
    Nuntawong, Noppadon
    Sopitpan, Suwat
    Yordsri, Visittapong
    Thanachayanont, Chanchana
    Kanjanachuchai, Songphol
    Ratanathammaphan, Somchai
    Tandaechanurat, Aniwat
    Panyakeow, Somsak
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
  • [30] Investigations of InSb-based quantum dots grown by molecular-beam epitaxy
    Deguffroy, N.
    Tasco, V.
    Baranov, A. N.
    Satpati, B.
    Trampert, A.
    Dunaevski, M.
    Titkov, A.
    Genty, F.
    Tournie, E.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1743 - +
12345