InSb/InAs quantum dots grown by liquid phase epitaxy

被引：0
|
作者：
K. D. Moiseev
Ya. A. Parkhomenko
A. V. Ankudinov
E. V. Gushchina
M. P. Mikhaĭlova
A. N. Titkov
Yu. P. Yakovlev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
73.21.La; 81.15.Lm;
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摘要：
The first original results on the growth of quantum dots (QDs) in the InSb/InAs system by liquid phase epitaxy (LPE) are reported. The density and dimensions of QDs were studied by methods of scanning probe microscopy and atomic force microscopy. The surface density, shapes, and dimensions of LPE-grown nanoislands depend on the growth conditions (temperature, cooling rate, and solution melt-substrate contact time). In the interval of temperatures T = 420–445°C, homogeneous arrays of InSb quantum dots on InAs(100) substrates were obtained with an average height of H = 3.4 ± 1nm, a radius of R = 27.2 ± 7.5 nm, and a density of up to 1.9 × 1010 cm−2.
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页码：295 / 298
页数：3
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