Investigation of Morphology of InSb/InAs Quantum Nano-Stripe Grown by Molecular Beam Epitaxy

被引：0
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作者：
Rongrueangkul, Karn [1 ]
Srisinsuphya, Panithan [1 ]
Thainoi, Supachok [1 ]
Kiravittaya, Suwit [2 ]
Nuntawong, Noppadon [3 ]
Sopitpan, Suwat [3 ]
Yordsri, Visittapong [3 ]
Thanachayanont, Chanchana [3 ]
Kanjanachuchai, Songphol [1 ]
Ratanathammaphan, Somchai [1 ]
Tandaechanurat, Aniwat [1 ]
Panyakeow, Somsak [1 ]
机构：
[1] Chulalongkorn Univ, Fac Engn, Bangkok, Thailand
[2] Naresuan Univ, Fac Engn, Phitsanulok, Thailand
[3] Natl Sci & Technol Dev Agcy, Bangkok, Thailand
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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