InSb quantum dots in an InAsSb matrix grown by molecular beam epitaxy

被引：0

作者：

Semenov, AN ^{[1
]}

Solov'ev, VA ^{[1
]}

Meltser, BY ^{[1
]}

Lyublinskaya, OG ^{[1
]}

Terent'ev, YV ^{[1
]}

Sitnikova, AA ^{[1
]}

Ivanov, SV ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

ACTA PHYSICA POLONICA A | 2005年 / 108卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.108.859

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4 mu m. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ca)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5 mu m has been observed at 80 K.

引用

下载

页码：859 / 865

页数：7

共 50 条

[1] InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy
Kudo, M
Nakaoka, T
Iwamoto, S
Arakawa, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7): : L45 - L47
[2] InAsSb quantum dots grown on GaAs substrates by molecular beam epitaxy
Kudo, Makoto
Nakaoka, Toshihiro
Iwamoto, Satoshi
Arakawa, Yasuhiko
Jpn J Appl Phys Part 2 Letter, 1-7 (L45-L47):
[3] Investigations of InSb-based quantum dots grown by molecular-beam epitaxy
Deguffroy, N.
Tasco, V.
Baranov, A. N.
Satpati, B.
Trampert, A.
Dunaevski, M.
Titkov, A.
Genty, F.
Tournie, E.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1743 - +
[4] Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy
Rihani, J.
Ben Sedrine, N.
Sallet, V.
Harmand, J. C.
Oueslati, M.
Chtourou, R.
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2008, 28 (5-6): : 918 - 922
[5] Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
Tsatsul'nikov, AF
Ivanov, SV
Kop'ev, PS
Krestnikov, IL
Kryganovskii, AK
Ledentsov, NN
Maximov, MV
Mel'tser, BY
Nekludov, PV
Suvorova, AA
Titkov, AN
Volovik, BV
Grundmann, M
Bimberg, D
Alferov, ZI
MICROELECTRONIC ENGINEERING, 1998, 43-4 : 85 - 90
[6] Molecular-beam epitaxy of InSb/GaSb quantum dots
Deguffroy, N.
Tasco, V.
Baranov, A.N.
Tourní, E.
Satpati, B.
Trampert, A.
Dunaevskii, M.S.
Titkov, A.
Ramonda, M.
Journal of Applied Physics, 2007, 101 (12):
[7] Molecular-beam epitaxy of InSb/GaSb quantum dots
Deguffroy, N.
Tasco, V.
Baranov, A. N.
Tournie, E.
Satpati, B.
Trampert, A.
Dunaevskii, M. S.
Titkov, A.
Ramonda, M.
JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
[8] Self-assembled InAsSb quantum dots grown on GaAs substrates by molecular-beam epitaxy
Kudo, N
Nakaoka, T
Iwamoto, S
Arakawa, Y
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 687 - 690
[9] Self-organized InSb quantum dots grown by atomic layer molecular beam epitaxy
Ferrer, JC
Peiro, F
Cornet, A
Morante, JR
Utzmeier, T
Armelles, G
Briones, F
COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 817 - 820
[10] Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
Fan, Dingxun
Li, Sen
Kang, N.
Caroff, Philippe
Wang, L. B.
Huang, Y. Q.
Deng, M. T.
Yu, C. L.
Xu, H. Q.
NANOSCALE, 2015, 7 (36) : 14822 - 14828

← 1 2 3 4 5 →