InSb quantum dots in an InAsSb matrix grown by molecular beam epitaxy

被引：0

作者：

Semenov, AN ^{[1
]}

Solov'ev, VA ^{[1
]}

Meltser, BY ^{[1
]}

Lyublinskaya, OG ^{[1
]}

Terent'ev, YV ^{[1
]}

Sitnikova, AA ^{[1
]}

Ivanov, SV ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

ACTA PHYSICA POLONICA A | 2005年 / 108卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.108.859

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on molecular beam epitaxy of InSb insertions in InAs and InAsSb matrices, emitting at wavelengths beyond 4 mu m. Different growth techniques for deposition of InSb quantum dots in the 1-2 monolayer range of the InSb nominal thickness, namely conventional molecular beam epitaxy and migration enhanced epitaxy, as well as different matrices (InAs and InAsSb) have been employed for increasing the emission wavelength of the InSb/InAs nanostructures. The formation of InSb quantum dots has been studied in situ using reflection high energy electron diffraction and ex situ by using transmission electron microscopy. The peculiarities of In(Ca)AsSb alloys growth and compositional control are also discussed. Bright photoluminescence up to 4.5 mu m has been observed at 80 K.

引用

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页码：859 / 865

页数：7

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