InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

被引：13
|
作者：
Carrington, P. J. [1 ]
Solov'ev, V. A. [1 ,2 ]
Zhuang, Q. [1 ]
Vanov, S. V. [2 ]
Krier, A. [1 ]
机构：
[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[2] Loffe Physicotech Inst, St Petersburg 194021, Russia
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
Mid-infrared; InSb quantum dots; Light emitting diodes; Molecular beam epitaxy;
D O I：
10.1016/j.mejo.2008.06.058
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix which exhibit intense mid-infrared photoluminescence up to room temperature. The InSb QD sheets were formed by briefly exposing the surface to an antimony flux (Sb-2) exploiting an As-Sb anion exchange reaction. Light emitting diodes were fabricated using 10 InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 mu m at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：469 / 472
页数：4
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