Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

被引：32
|
作者：
Henini, M. [1 ]
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
NANOSCALE RESEARCH LETTERS | 2006年 / 1卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
heterostructures; semiconductors; self-assembly; quantum dots; lasers; optoelectronics;
D O I：
10.1007/s11671-006-9017-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.
引用
收藏
页码：32 / 45
页数：14
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