Molecular-beam epitaxy of InSb/GaSb quantum dots

被引：0
|
作者：
Deguffroy, N. [1 ]
Tasco, V. [1 ,5 ]
Baranov, A.N. [1 ]
Tourní, E. [1 ]
Satpati, B. [2 ]
Trampert, A. [2 ]
Dunaevskii, M.S. [3 ]
Titkov, A. [3 ]
Ramonda, M. [4 ]
机构：
[1] Institut d'Electronique du Sud (IES), CC 067, UMR 5214, Place Eugne Bataillon, F-34095 Montpellier Cedex 5, France
[2] Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany
[3] Ioffe-Physico-Technical Institute, 194021 St. Petersburg, Russia
[4] Laboratoire de Microscopie en Champ Proche, CC 082, Universit´ Montpellier 2, Place Eugne Bataillon, F-34095 Montpellier, Cedex 5, France
[5] National Nanotechnology Laboratory, CNR-INFM, Lecce, Italy
来源：
Journal of Applied Physics | 2007年 / 101卷 / 12期
关键词：
Semiconductor quantum dots;
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摘要：
Journal article (JA)
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