A new approach to the optimization of resistive frequency converters based on Schottky barrier diodes

被引:0
|
作者
Yu. A. Nemlikher
I. A. Strukov
机构
关键词
06.30.Ft; 85.30.Kk;
D O I
暂无
中图分类号
学科分类号
摘要
A new approach to the optimization of the transfer characteristics of resistive frequency converters is studied. In this approach, with allowance for the requirement of practicality, the required power of a local oscillator is determined for the assigned conductance of a signal generator. As has been demonstrated, this is also the necessary condition that ensures the zero sensitivity of conversion loss to small fluctuations in the power of a local oscillator. The formulas required for calculations have been obtained.
引用
收藏
页码:218 / 224
页数:6
相关论文
共 50 条
  • [41] Schottky Diodes Based on the New Chitin Derivatives
    İlhan Önder Aksoy
    Giray Uzun
    Yusuf Selim Topal
    Ömer Ocak
    Derya Çelik
    Polymer Science, Series A, 2019, 61 : 242 - 252
  • [42] Schottky Diodes Based on the New Chitin Derivatives
    Aksoy, Onder
    Uzun, Ilhan
    Topal, Giray
    Ocak, Yusuf Selim
    Celik, Omer
    Batibay, Derya
    POLYMER SCIENCE SERIES A, 2019, 61 (03) : 242 - 252
  • [43] Analytical Model of TeraHertz Frequency Voltage Noise in Schottky-barrier Diodes and Heterostructure Barrier Varactors
    Mahi, F. Z.
    Varani, L.
    Shiktorov, P.
    Starikov, E.
    Gruzhinskis, V.
    PIERS 2011 MARRAKESH: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, 2011, : 702 - 705
  • [44] A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES
    Guo, Jian
    Xu, Jie
    Qian, Cheng
    PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER, 2013, 137 : 407 - 424
  • [46] Planar InP-based Schottky barrier diodes for terahertz applications
    周静涛
    杨成樾
    葛霁
    金智
    Journal of Semiconductors, 2013, 34 (06) : 54 - 57
  • [47] Field plate engineering for GaN-based Schottky barrier diodes
    Lei Yong
    Shi Hongbiao
    Lu Hai
    Chen Dunjun
    Zhang Rong
    Zheng Youdou
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (05)
  • [48] 1.43 kV GaN-based MIS Schottky barrier diodes
    Huang, Fuping
    Chu, Chunshuang
    Wang, Zhizhong
    Tian, Kangkai
    Gong, Hehe
    Zhang, Yonghui
    Li, Yongjian
    Ye, Jiandong
    Zhang, Zi-Hui
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (18)
  • [49] Planar InP-based Schottky barrier diodes for terahertz applications
    周静涛
    杨成樾
    葛霁
    金智
    Journal of Semiconductors, 2013, (06) : 54 - 57
  • [50] Fabrication of diamond based Schottky Barrier Diodes with oxide ramp termination
    Brezeanu, G.
    Avram, M.
    Brezeanu, M.
    Boianceanu, C.
    Udrea, F.
    Amaratunga, G. A. J.
    CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2007, : 411 - +