Fabrication of diamond based Schottky Barrier Diodes with oxide ramp termination

被引：0
|
作者：
Brezeanu, G. [1 ]
Avram, M. [2 ]
Brezeanu, M. [3 ]
Boianceanu, C. [1 ]
Udrea, F. [3 ]
Amaratunga, G. A. J. [3 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest, Romania
[2] IMT, Natl Inst R&D Microtechnol, Bucharest, Romania
[3] Univ Cambridge, Dept Engn, Cambridge CB2 1TN, England
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
diamond; Schottky diodes; field plate; oxide ramp;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer non-uniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included.
引用
收藏
页码：411 / +
页数：2
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