Fabrication of diamond based Schottky Barrier Diodes with oxide ramp termination

The paper goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer non-uniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included.