A new approach to the optimization of resistive frequency converters based on Schottky barrier diodes

被引:0
|
作者
Yu. A. Nemlikher
I. A. Strukov
机构
关键词
06.30.Ft; 85.30.Kk;
D O I
暂无
中图分类号
学科分类号
摘要
A new approach to the optimization of the transfer characteristics of resistive frequency converters is studied. In this approach, with allowance for the requirement of practicality, the required power of a local oscillator is determined for the assigned conductance of a signal generator. As has been demonstrated, this is also the necessary condition that ensures the zero sensitivity of conversion loss to small fluctuations in the power of a local oscillator. The formulas required for calculations have been obtained.
引用
收藏
页码:218 / 224
页数:6
相关论文
共 50 条
  • [21] New Schottky diodes with very broad frequency band
    Bava, E
    Beverini, N
    Carelli, G
    Finotti, M
    Galzerano, G
    Moretti, A
    Svelto, C
    2002 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS, CONFERENCE DIGEST, 2002, : 200 - 201
  • [22] Analysis of dynamic characteristics of SiC Schottky barrier diodes at high switching frequency based on junction capacitance
    Maeda, Ryosuke
    Okuda, Takafumi
    Hikihara, Takashi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [23] Fabrication of Schottky barrier diodes based on ZnO for flexible electronics
    J. C. Tinoco
    S. A. Hernández
    O. Rodríguez-Bernal
    A. G. Vega-Poot
    G. Rodríguez-Gattorno
    M. de la L. Olvera
    A. G. Martinez-Lopez
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 7373 - 7377
  • [24] High quality GaN-based Schottky barrier diodes
    Lee, K. H.
    Chang, S. J.
    Chang, P. C.
    Wang, Y. C.
    Kuo, C. H.
    APPLIED PHYSICS LETTERS, 2008, 93 (13)
  • [25] 170 GHz Passive Tripler Based on Schottky Barrier Diodes
    Niu, Zhongqian
    Dai, Bingli
    Zhang, Bo
    Fan, Yong
    2021 14TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT 2021), 2021,
  • [26] Terahertz Schottky barrier diodes based on homoepitaxial GaN materials
    Liang, Shixiong
    Xing, Dong
    Wang, J. L.
    Yang, D. B.
    Fang, Y. L.
    Gu, G. D.
    Guo, H. Y.
    Zhang, L. S.
    Zhao, X. Y.
    Feng, Zhihong
    2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2015,
  • [27] Fabrication of Schottky barrier diodes based on ZnO for flexible electronics
    Tinoco, J. C.
    Hernandez, S. A.
    Rodriguez-Bernal, O.
    Vega-Poot, A. G.
    Rodriguez-Gattorno, G.
    Olvera, M. de la L.
    Martinez-Lopez, A. G.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (10) : 7373 - 7377
  • [28] ANALYSIS OF FREQUENCY MULTIPLIERS CONSTRUCTED FROM SCHOTTKY-BARRIER DIODES.
    Grunenkov, A.A.
    Kalinin, B.V.
    Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1982, 36-37 (10): : 79 - 81
  • [29] Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes
    Chang, P. C.
    Yu, C. L.
    Liu, C. H.
    Chang, S. J.
    Su, Y. K.
    Chuang, R. W.
    Chiu, Y. J.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 5, 2007, 4 (05): : 1625 - +
  • [30] Reduced low-frequency noise Schottky barrier diodes for terahertz applications
    Suzuki, T
    Yasui, T
    Fujishima, H
    Nozokido, T
    Araki, M
    Boric-Lubecke, O
    Lubecke, VM
    Warashina, H
    Mizuno, K
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (09) : 1649 - 1655