Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films

被引：0
|
作者：
Xihong Hao
Jiwei Zhai
Fen Zhou
Xiwen Song
Shengli An
机构：
[1] Tongji University,Functional Materials Research Laboratory
[2] Inner Mongolia University of Science and Technology,School of Materials and Metallurgy
来源：
Journal of Sol-Gel Science and Technology | 2010年 / 53卷
关键词：
Antiferroelectric films; Sol-gel process; Phase switching; Strains;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT 2/95/5) antiferroelectric films with (100) preferred orientation were successfully prepared on Pt-buffered silicon substrates via the sol-gel method. SEM results indicated that PLZT 2/95/5 antiferroelectric films with a thickness over 1,000 nm showed a crack surface. Also, it was found that, as the increase of the thickness, the field-induced strains were decreased gradually. Moreover, the frequency-dependent field-induced strains illustrated that the typical strains-electric field (S-E) curves with the maximum values could be obtained at a lower measurement frequency <500 Hz.
引用
收藏
页码：366 / 371
页数：5
相关论文
共 50 条
  • [1] Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films
    Hao, Xihong
    Zhai, Jiwei
    Zhou, Fen
    Song, Xiwen
    An, Shengli
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2010, 53 (02) : 366 - 371
  • [2] Fabrication and Characterization of Sol-Gel Derived (100)-Textured (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Thin Films
    Hao, Xihong
    Zhai, Jiwei
    Song, Xiwen
    Yang, Jichun
    Ren, Huiping
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2009, 92 (12) : 3081 - 3083
  • [3] Influence of Film Thickness on Dielectric Properties of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Antiferroelectric Thin Films
    Liu, Jun
    Wang, Jing
    Zhang, Yating
    Geng, Wenping
    Chou, Xiujian
    ADVANCED ENGINEERING MATERIALS, PTS 1-3, 2011, 194-196 : 2467 - 2471
  • [4] Effects of thickness on switching current for (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films under thermo-electric coupled field
    An, Kun
    Wang, Erwei
    He, Jian
    Chou, Xiujian
    Xue, Chenyang
    Zhang, Wendong
    MICRO & NANO LETTERS, 2016, 11 (08): : 420 - 424
  • [5] Phase transition current of antiferroelectric (Pb0.97La0.02)(Zr0.95Ti0.05)O3 thick films under thermo-electric coupled field
    An, Kun
    Li, Peiqing
    Chen, Donghong
    Chou, Xiujian
    Xue, Chenyang
    Liu, Jun
    Zhang, Wendong
    SOLID STATE COMMUNICATIONS, 2014, 180 : 64 - 67
  • [6] Electrical properties of Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films on TiO2 buffer
    Hao, Xihong
    Zhai, Jiwei
    Yao, Xi
    MATERIALS RESEARCH BULLETIN, 2008, 43 (04) : 1038 - 1045
  • [7] Energy storage and polarization switching kinetics of (001)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films
    Liu, C.
    Lin, S. X.
    Qin, M. H.
    Lu, X. B.
    Gao, X. S.
    Zeng, M.
    Li, Q. L.
    Liu, J. -M.
    APPLIED PHYSICS LETTERS, 2016, 108 (11)
  • [8] Effect of bottom electrodes on polarization switching and energy storage properties in Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films
    Fang, X. G.
    Lin, S. X.
    Zhang, A. H.
    Lu, X. B.
    Gao, X. S.
    Zeng, M.
    Liu, J. -M.
    SOLID STATE COMMUNICATIONS, 2015, 219 : 39 - 42
  • [9] Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films
    Hao, Xihong
    Yue, Zhenxing
    Xu, Jinbao
    An, Shengli
    Nan, Ce-Wen
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [10] B-site non-stoichiometric (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric ceramics for energy storage
    Niu, Zhong-Hua
    Jiang, Yan-Ping
    Tang, Xin-Gui
    Liu, Qiu-Xiang
    Li, Wen-Hua
    JOURNAL OF ASIAN CERAMIC SOCIETIES, 2018, 6 (03): : 240 - 246
12345