Effect of bottom electrodes on polarization switching and energy storage properties in Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films

Polarization switching and energy storage properties of a series of Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) thin films deposited on (100)-textured LaNiO3 (LNO)-buffered Si substrates and (111)-textured Pt/Ti/SiO2/Si substrates were investigated. It was revealed that the PLZT films deposited on the (100)-textured LNO-buffered Si substrates prefer the (100) textured structure, while the orientation of the films deposited on the (111)-textured Pt-coated Si substrates is random. With respect to the films on the Pt-coated Si substrates, the (100) textured PLZT films have bigger compressive residual stress, larger electrical polarization, better dielectric properties, and better energy storage performances. For the (100)-orientated PLZT films, the energy density (W-s) and efficiency (eta) measured at room temperature are about 15.3 J/cm(3) and 56% respectively. Moreover, the better frequency stability in the range from 20 Hz to 10 kHz, and temperature stability in the range from 25 to 270 degrees C are demonstrated in the (100)-orientated PLZT films. These results indicate that the PLZT films with LNO bottom electrode could be potential candidate for applications in high energy storage density capacitors. (C) 2015 Elsevier Ltd. All rights reserved.