Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films

被引：87
|
作者：
Hao, Xihong [1 ,2 ,3 ]
Yue, Zhenxing [1 ,2 ]
Xu, Jinbao [4 ]
An, Shengli [3 ]
Nan, Ce-Wen [1 ,2 ]
机构：
[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[3] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
[4] Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 06期
基金：
中国国家自然科学基金;
关键词：
DIELECTRIC-PROPERTIES; CAPACITORS; CERAMICS; FABRICATION;
D O I：
10.1063/1.3641983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O-3 (PLZT) antiferroelectric films with a thickness of about 1.7 mu m were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm(2) over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm(3) at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, Delta T = 8.5 degrees C, was obtained near the phase-transition temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641983]
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页数：5
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