Thickness and frequency dependence of electric-field-induced strains of sol-gel derived (Pb0.97La0.02)(Zr0.95Ti0.05)O3 antiferroelectric films

被引：0
|
作者：
Xihong Hao
Jiwei Zhai
Fen Zhou
Xiwen Song
Shengli An
机构：
[1] Tongji University,Functional Materials Research Laboratory
[2] Inner Mongolia University of Science and Technology,School of Materials and Metallurgy
来源：
Journal of Sol-Gel Science and Technology | 2010年 / 53卷
关键词：
Antiferroelectric films; Sol-gel process; Phase switching; Strains;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT 2/95/5) antiferroelectric films with (100) preferred orientation were successfully prepared on Pt-buffered silicon substrates via the sol-gel method. SEM results indicated that PLZT 2/95/5 antiferroelectric films with a thickness over 1,000 nm showed a crack surface. Also, it was found that, as the increase of the thickness, the field-induced strains were decreased gradually. Moreover, the frequency-dependent field-induced strains illustrated that the typical strains-electric field (S-E) curves with the maximum values could be obtained at a lower measurement frequency <500 Hz.
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页码：366 / 371
页数：5
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