Effects of thermal annealing treatment on the optical and the electrical properties of GaN films grown on Si substrates

被引：0

作者：

Minyoung Lee

Hyunsik Im

Hyungsang Kim

Dong-Seok Kim

Jung-Hee Lee

Cheong Hyun Roh

Cheol-Koo Hahn

机构：

[1] Dongguk University,Department of Semiconductor Science

[2] Dongguk University,Department of Physics

[3] Kyungpook National University,School of Electrical Engineering and Computer Science

[4] Korea Electronics Technology Institute,Electric Power IT Research Center

来源：

Journal of the Korean Physical Society | 2012年 / 60卷

关键词：

Dislocation defects; Luminescence; GaN;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effects of rapid thermal annealing on the optical and the electrical properties in GaN epilayers grown on Si substrates were investigated by using cathodoluminescence (CL) and Hall effect measurements. From the two-dimensional CL image measurements, the distribution of defects embedded in the films was investigated before and after rapid thermal annealing. The penetration depth dependence of the CL spectrum demonstrated that the defect density become large in the deeper region away from the GaN surface.

引用

页码：1809 / 1813

页数：4

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