Effects of thermal annealing on the microstructural properties of the lower region in ZnO thin films grown on n-Si (001) substrates

被引：0

作者：

Yuk J.M. ^{[1
]}

Lee J.Y. ^{[1
]}

Kim T.W. ^{[2
]}

Son D.I. ^{[3
]}

Choi W.K. ^{[4
]}

机构：

[1] Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology

[2] Division of Electronics and Computer Engineering, Hanyang University

[3] Department of Information Display Engineering, Hanyang University

[4] Thin Film Material Research Center, Korea Institute of Science and Technology

来源：

J Mater Res | 2008年 / 4卷 / 1082-1086期

关键词：

D O I：

10.1557/jmr.2008.0141

中图分类号：

学科分类号：

摘要：

Transmission electron microscopy (TEM) images, selected-area electron-diffraction patterns, high-resolution TEM images, and x-ray energy dispersive spectroscopy line scans for the ZnO/n-Si (001) heterostructures annealed at 900 °C showed that stacking faults and amorphous layers were formed in the lower region of the ZnO films. The stacking faults existing in the lower region of the ZnO columnar grains originated from the formation of zinc vacancy layers caused by the thermal treatment, resulting in the existence of a tensile strain. The formation of the amorphous layer in the ZnO film was attributed to the accumulation of zinc vacancy layers. © 2008 Materials Research Society.

引用

页码：1082 / 1086

页数：4

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